Single crystal germanium wafer

1. Production introduction:

Our company provides you with high quality single crystal germanium production, single crystal germanium chip, etc., we have 5 professional and efficient single crystal furnace, we use the Czochralski method to produce single crystal germanium, with an annual output of 30 tons of germanium, fully guarantee your supply, welcome to inquire or purchase.

2.Introduction of single crystal germanium chip

As a common far-infrared material, it has good transmittance in the light transmission range of 2000Nm to 17000nm, and is opaque in the visible light band, so germanium is very suitable for infrared laser applications, and its refractive index is very high. It is an ideal choice for biomedical and military imaging applications. It is commonly used in infrared thermal system, laser applications, etc.

3. Application of single crystal germanium chip:

Semiconductor devices, infrared optical devices, solar cell substrates and other materials.

4. Processing method of single crystal germanium wafer

Single crystal germanium wafer is a kind of sheet single crystal germanium material which is cut and ground by multi wire cutting machine.


In recent years, stimulated by the strong demand for infrared optical and semiconductor materials, China's germanium production technology capacity has improved rapidly. At present, domestic enterprises have been able to produce optical fiber grade, infrared grade and solar grade germanium products.


At present, the main production methods of germanium single crystal are Czochralski method, horizontal Bridgman method and VGF method. Among them, Czochralski method is the most commonly used growth method of germanium single crystal, which has the advantages of visualization of growth process, high yield, high degree of automation of crystal growth, no contact between crystal and crucible, avoiding parasitic nucleation of crucible and other defects. But at the same time, the diameter of the crucible should be more than 2 times of the crystal diameter. Therefore, it is difficult to grow germanium single crystals with large size by Czochralski method. The horizontal Bridgman method has the advantages of fast crystal growth and low cost, but it is difficult to grow large size germanium single crystal because of the D-type crystal and low utilization. The crystal diameter of the VGF method is the same as that of the crucible. Theoretically, large size germanium single crystals can be grown. However, it is easy to form parasitic nucleation at the junction of crucible and crystal. In addition, the crystal grown by VGF method has concave interface, which is difficult to guarantee the yield of crystal.

http://www.uno-oe.com/product-x-229.html